PUBLICATIONS 2006


JOURNAL PAPERS :

“All-optical wavelength convertion by EAM with shifted bandpass filter for high bit-rate networks", N. El Dahdah*, R. Coquillé*, P. Charbonnier**, E. Pincemin*, C. Kazmierski**, J. Decobert**, A. Vedadi***, G. Aubin***, A. Ramdane***(*France Telecom Research and Development, Lannion, France,**Alcatel-Thales, 3-5lab, Marcoussis, France,***CNRS, Laboratory of Photonics and Nanostructure, Marcoussis, France)

Review : IEEE, Photonics Technology Letters,Volume 18, N0.1, January 1 2006

“Sub-Picosecond pulse generation at 134 GHz using a quantum dash-based Fabry-Perot Laser emitting at 1.56 µm”, C. Gosset*, K. Merghem*, A. Martinez*,G. Moreau*, G. Patriarche*, G. Aubin*, J. Landreau**, F. Lelarge**, A. Ramdane* (*CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France, **Alcatel-Thales, 3-5lab, Marcoussis, France)

Review : Electronics letters -19 th January 2006 VOL. 42 N°2,

"Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si Substrate", D. Ducatteau*, A. Minko*, V. Hoël*, E. Morvan**, E. Delos*, B. Grimbert*, H. Lahreche***, P. Bove***, C. Gaquière*, JC. De Jaeger*, S. Delage** (IEMN-TIGER, UMR-CNRS 8520, Lille university, Villeneuve d'Ascq, France,**Alcatel-Thales, 3-5lab, Marcoussis, France, *** Picogiga, Courtaboeuf, France)

Review : IEEE Electron Device Letters, Vol. 27, N° 1, January 2006, Pages 7-9

“Design and fabrication of a p-i-n photodiode with high responsivity and large alignment tolerances for 40-Gb/s applications”, M. Achouche*, V. Magnin**, J. Harari**, D. Carpentier*, E. Derouin*, C. Jany*, D. Decoster* (*Alcatel-Thales, 3-5lab, Marcoussis, France,**Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN)–UMR CNRS 8520, Villeneuve d’Asq, France)

Review   : Photonics Technology Letters, Vol. 18, N° 4, February 15, 2006, Pages 556-558

“High extinction ratio an high-temperature 2.5-Gb/s floor-free 1.3 µm transmission with a directly modulated quantum dot laser”, B. Dagens*, A. Martinez**, JG. Provost*, D. Make*, O. Le Gouezigou*, F. Ferlazzo**, K. Merghem**, A. Lemaître**, A. Ramdane**, B. Thedrez*** (*Alcatel-Thales, 3-5lab, Marcoussis, France,**CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France,*** ENST, Paris, France)

Review  : Photonics Technology letters, V. 18, N° 4, February 15, 2006

"Punch-Through in Short-Channel AlGaN/GaN HFETs”, MJ Uren*, KJ Nash*, RS. Balmer*, T. Martin*, E. Morvan***, N. Caillas**, S. Delage***, D. Ducatteau*, B. Grimbert***, JC. De Jaeger*** (* QinetiQ Ltd, Worcestershire, United Kingdom,**Thales, Palaiseau, France,***Tiger/IEMN Inst. D’electronique de Microélectronique et de Nanotechnologie, Villeneuve d’Ascq, France, ***Alcatel-Thales, 3-5lab, Marcoussis, France)

Review : IEEE Transactions of Electron Devices, Volume 53, N0.2, February 2006

« Phase and amplitude characterization of 40-GHz self-pulsating DBR laser based on autocorrelation analysis », C.Gosset*, J. Renaudier**, GH. Duan,*** JL. Oudar*, (*CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France, ** Ecole Nationale Supérieure des Télécommunications (ENST) GET-Telecom Paris,***Alcatel-Thales, 3-5lab, Marcoussis, France)

Review : Journal of Lightwave Technology Vol 24, February 2006 pages 970- 975

"Optically beamformed beam-switched adaptive antennas for fixed and mobile broad-band wireless access networks",M A. Piqueras*, G. Grosskopf**, B. Vidal*, J. Herrera*, J.M. Martinez*, P. Sanchis*, V. Polo*, J.L. Corral*, A. Marceaux***, J. Galière****, J. Lopez****, A. Esnard***, JL. Valard****, O. Parillaud***, E. Estèbe****, N. Vodjdani***, MS. Choi**, J.H. den Besten*****, F. M. Soares*****, M.K.Smit*****, J. Marti* (*Nanophotonics Technology Center, Universidad Politécnica de Valencia, Valencia, Spain,**Frauhofer-Institute for Telecommunications, Heinrich-Hertz Institute, Berlin, Germany,*** Alcatel-Thales, 3-5lab, Marcoussis, France,**** Thales Research & Technology, Palaiseau, France, *****Cobra Resaerch Institute, Technische Universiteit Eindhoven, Eindhoven, The Nederlands)

Review : IEEE Transactions on microwave theory and techniques, Vol. 54, N°2, February 2006

"Accurate determination of the Noise Figure of Polarization -Dependent optical amplifiers : theory and Experiment", Tristan Briant *, Philippe Grangier*, Rosa Tualle-Brouri*, Alain Bellemain*, R. Brenot**, Bruno Thedrez** (*Institut d'Optique, Centre Scientifique d'Orsay, Orsay, France,** Alcatel-Thales, 3-5 lab, Marcoussis, France)

Review : Journal of Lightwave Technology, Vol. 24, N° 3, March 2006

« Towards High-speed 40 Gbit/s transponders », A. Scavennec*, O. Leclerc** (*Alcatel-Thales, 3-5lab, Marcoussis, France,** Alcatel-CIT, R&I, Marcoussis, France)

Review   : Proceedings of the IEEE, Invited paper, Volume 94, Issue 5, May 2006, Pages 986-996

«Spectral cross-talk in dual-band quantum well infrared detectors”, A. Nedelcu*, X. Marcadet*, O. Huet*, P. Bois*,(*Alcatel-Thales, 3-5lab, Marcoussis, France)

Review   : Applied Physics Letters, May 2006, 88, 191113

“Cascadability assessment of a 2R regenerator based on saturable absorber and semiconductor optical amplifier in a path switchable recirculating loop”, M. Gay*, L. Bramerie*, D. Massoubre**, A. O’Hare***, A. Shen****, JL. Oudar**, JC. Simon* (*Ecole Nationale des Sciences Appliquées et de Technologies, UMR Foton, Université de Rennes, Lannion, France, **CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France, ***School of Physics, Dublin Institute of Technology, Dublin, Ireland,****Alcatel-Thales III-V Lab, Palaiseau, France)

Review  : IEEE Photonics Technology letters, Vol 18, N° 11, June 1, 2006

“Standard-compliant jitter transfer function of an all-optical clock recovery at 40 GHz based on a quantum-dots self-pulsating semiconductor laser”, J. Renaudier*, B. Lavigne**, F. Lelarge*, M. Jourdan***, B. Dagens*, O. Le Gouezigou*, P. Gallion****, GH Duan (*Alcatel-Thales, 3-5lab, Marcoussis, France,**Alcatel Research & Innovation, Marcoussis, France, ***Aeroflex Europtest, Elancourt, France, ****ENST, Départment Communications et Electronique, Paris, France)

Review  : IEEE,Photonics Technology Letters, Vol. 18, N° 11, June 2006, Pages 1249-1251

"High-power evanescently-couppled waveguide photodiodes", N. Michel*, V. Magnin**, J. Harari**, A. Marceaux*, O. Parillaud*, D. Decoster**, N. Vodjdani* (*Alcatel-Thales, 3-5lab, Marcoussis, France,**Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS, Villeneuve d'Ascq, France)

Review : Optoelectronics, IEEE Proceedings, Vol. 153, N° 4, August 2006, Pages 199-204

«Analysis of t hermal lim itations in High-Speed microcavity saturable absorber all-optical switching gates», D. Massoubre*, JL. Oudar*, A. O’Hare**, M. Gay***, L. Bramerie***, JC. Simon***, A. Shen****, J. Decobert****, (* CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France,** School of physics, Dublin Institute of Technology, Dublin, Ireland,***Laboratoire d’Optronique, CNRS UMR Foton 6082, ENSSAT, Université de Rennes, Lannion, France, ****Alcatel-Thales, 3-5lab, Marcoussis, France)

Review   : Journal of Lightwave Technology, Vol 24, N° 9, September 2006

" Study of phase-noise properties and timing jitter of 40-GHz all-optical clock recovery using self-pulsating semiconductor lasers " J. Renaudier*, B. Lavigne**, P. Gallion***, GH. Duan* (*Alcatel-Thales, 3-5lab, Marcoussis, France,** Alcatel CIT, R&I, Marcoussis, France, *** ENST, Paris, France)

Review   : Journal of Lightwave Technology, Vol 24, N° 10, October 2006

CONFERENCE PROCEEDINGS :

«High-power, high-brightness tapered lasers with an Al-free active region at 915 nm”, N. Michel*, I. Hassiaoui*, M. Lecomte*, O. Parillaud*, M. Calligaro*, M. Krakowski*,(*Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Photonics West 2006, San Jose Ca, USA, January, 22-26, 2006

«High-power al-free active region (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications”, V. Ligeret*, FJ. Vermersch*, S. Bansporun**, M. Lecomte*, M. Calligaro*, O. Parillaud*, M. Krakowski*(*Alcatel-Thales, 3-5lab, Marcoussis, France, ** Thales Research and Technology, Palaiseau, France)

Conference : Photonics West 2006, San Jose Ca, USA January, 22-26, 2006

«Sub-picosecond pulse generation at 134 GHz using a quantum dash Fabry Perot laser emitting at 1.56 µm », K. Merghem*, C. Gosset*, A. Martinez*, G. Moreau*, G. Patriarche*, G. Aubin*, J. Landreau**, F. Lelarge**, A. Ramdane*, (* CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France,**Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Worshop Sandie 2006, Paris, France, March, 16-17, 2006

«Linewidth enhancement factor of high modal GAIN 9-layer InAs/InP quantum dash lasers emitting at 1.5 µm », G. Moreau*, K. Merghem*, G. Patriarche*, F. Lelarge**, A. Ramdane*, (* CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France,** Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Worshop Sandie 2006, Paris, France, March, 16-17, 2006

Conference : Optical Fiber Communication Conference 2006 OThG1, Anaheim, USA, March, 5-10, 2006

"11,4dB isolation on an amplifying AlGaInAs/InP optical waveguide isolator”, W. Van Parys*, D. Van Thourhout*, R. Baets*, B. Dagens***, J. Decobert***, O.  Le  Gouezigou***, D. Make***, R. Vanheertum**, L. Lagae** (*Department of information Technology (INTEC) Ghent University-IMEC, Gent, Belgium,**IMEC Leuven, Belgium,***Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Optical Fiber Communication Conference 2006 OFA2, Anaheim, USA, March, 5-10, 2006

“OSNR and jitter tolerant all-optical clock recovery at 40 Gbit/s using a quantum-dots based self-pulsating laser” B. Lavigne*, J.Renaudier**, F. Lelarge**, O. Le Gouezigou**, H. Gariah**, GH. Duan**, S. Bigo*
(* Alcatel Research and Innovation, Marcoussis, France,**Alcatel-Thales,
3-5lab, Marcoussis, France)

Conference : Optical Fiber Communication Conference 2006 OThG5, Anaheim, USA, March, 5-10, 2006

"First demonstration of a polarization insensitive low time jitter and optical noise tolerant all-optical clock recovery at 40 GHz using a self-pulsating laser tandem", B. Lavigne*, J.Renaudier**, F. Lelarge**, O. Le Gouezigou**, H. Gariah**, GH. Duan**,(*Alcatel Research and Innovation, Marcoussis, France,**Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Optical Fiber Communication Conference 2006, Postdeadline papers, PDP24, Anaheim, USA, March, 5-10, 2006

“ Sommation de signaux hyperfréquences par voie optique”, M. Chtioui*, A. Marceaux*, A. Enard*, F. Cariou*, C. Dernazaretian*, D. Carpentier*, M. Achouche* (*Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Journées Nano-Micro Electronique et Optoélectronique (JNMO) 2006, ref : composants et sytèmes opto-electroniques, Aussois, France, April, 4-7, 2006

« Lasers évasés de forte puissance et de forte brillance sans Aluminium dans la région active à 915 nm », I. Hassiaoui*, N. Michel*, M. Calligaro*, M. Lecomte*, O. Parillaud*, M. Krakowski* (*Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Journées Nano-Micro Electronique et Optoélectronique (JNMO) 2006 , composants et systèmes optoélectroniques, Aussois, France, April, 4-7, 2006

“Diode laser DFB à 852nm sans aluminium dans la zone active pour horloges et interférométrie atomiques” V. Ligeret*, F-J Vermersch*, S. Bansropun*, M. Lecomte*, M. Calligaro*, O. Parillaud*, M. Krakowski* ( *Alcatel-Thales, 3-5lab, Palaiseau, France)

Conference : Journées Nano-Micro Electronique et Optoélectronique (JNMO), 2006, ref : composants et sytèmes opto-electroniques, Aussois, France, April, 4-7, 2006

« TBH InP/GaInAs submicronique à géométrie hexagonale », V.Nodjiadjim*, M. Riet*, P. Berdaguer*, JL Gentner*, O. Drisse*, E. Derouin*, A Scavennec*, J. Godin* ( *Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Journées Nano-Micro Electronique et Optoélectronique (JNMO) 2006, ref. : composants elctroniques , Micro-Nano-electroniques, Aussois, France, April, 4-7, 2006

«Lasers à boîtes quantiques InAs/InP (100) pour applications opto-électroniques 1,55 µm » F. Lelarge*, B. Rousseau*, F. Martin*, A. Accard*, F.Pommereau*, F. Poingt*, L. Le Gouezigou*, E. Derouin*, O. Drisse*, O. Le Gouezigou*, J. Landreau*, D. Make*, B. Dagens*, R. Brenot*, J. Renaudier*, F. Van Dijk*, JG . Provost*, GH. Duan* ( *Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Invited paper, Journées Nano-Micro Electronique et Optoélectronique (JNMO) 2006 Aussois, France, April, 4-7, 2006

"High-power al-free active region (lambda = 852 nm) DFB laser diodes for atomic clocks and interferometry applications”, V. Ligeret**, FJ. Vermersch**, S. Bansporun*, M. Lecomte**, M. Calligaro**, O. Parillaud**, M. Krakowski** (* Thales Research and Technology, Palaiseau, France, **Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Spie Photonics Europe, Strasbourg, France, April, 3-7, 2006

«High-power, high-brightness Al-free active region tapered lasers at 915 nm”, I. Hassiaoui*, N. Michel*, M. Lecomte*, O. Parillaud*, M. Calligaro*, M. Krakowski*(*Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Spie Photonics Europe, Strasbourg, France, April, 3-7, 2006

« Technologies and applications of two-dimensional InP-based photonic crystals”, F. Pommereau*, R. Brenot*, F. Poingt*, L. Le Gouezigou*, O. Le Gouezigou*, J. Landreau*, B. Rousseau*, F. Lelarge*, O. Drisse*, E. Derouin*, M. Attali*, GH. Duan* (*Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : International Conference on Indium Phosphide and Related Materials (IPRM) 2006, TuB1.3 (Invited), Princeton, NJ, USA, May, 7-11, 2006

“High modal gain 9- and 12- layer InAs/InP quantum dash lasers emitting at 1.55 µm”, G. Moreau**, K. Merghem**, D. Cong**, G. Patriarche**, F. Lelarge*, B. Rousseau*, A. Ramdane** (*Alcatel-Thales, 3-5lab, Marcoussis, France,
**CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis)

Conference : International Conference on Indium Phosphide and Related Materials (IPRM) 2006, IPRMThB1.4, Princeton, NJ, USA, May, 7-11, 2006

“Low linewidth enhancement factor ( a_H~ 0.5) of 9-layer InAs/InP quantum dash lasers emitting at 1.55 µm”, G. Moreau**, K. Merghem**, F. Lelarge*, A. Ramdane** (*Alcatel-Thales, 3-5lab, Marcoussis, France,
**CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis)

Conference : International Conference on Indium Phosphide and Related Materials (IPRM) 2006, IPRMTuA1.3, Princeton, NJ, USA, May, 7-11, 2006

«Buried ridge stripe lasers using InAs/InP (100) quantum dashes based active layer : a step towards low noise sources for high-speed direct modulation », F. Lelarge*, B. Rousseau*, F. Martin*, F. Poingt*, L. Le Gouezigou*, F. Pommereau*, A. Accard*, D. Make*, O. Le Gouezigou*, J. Landreau*, JG. Provost*, J. Renaudier*, GH. Duan*, B. Dagens* (*Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : International Conference on Indium Phosphide and Related Materials (IPRM)'2006, IPRMTuA1.6Princeton, NJ, USA, May, 7-11, 2006

"10 Gbit/s amplified reflective electroabsorption modulator for colorless access networks”, A. Garreau*, J. Decobert*, C. Kazmierski*, MC. Cuisin*, JG. Provost*, H. Sillard*, F. Blache*, D. Carpentier* , J. Landreau*, P. Chanclou** (*Alcatel-Thales, 3-5lab, Marcoussis, France, **France Telecom, division R&D, Lannion, France)

Conference : International Conference on Indium Phosphide and Related Materials (IPRM) 2006, IPRMTuA2.3, Princeton, NJ, USA, May, 7-11, 2006

“InP DHBT technology development for high bitrate mixed-signal IC fabrication”, J. Godin*, M. Riet*, P. Berdaguer*, N. Nodjiadjim*, A. Konczykowska*, A. Scavennec* (*Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : International Conference on Indium Phosphide and Related Materials (IPRM) 2006, IPRMWB2.2 (Invited), Princeton, NJ, USA, May, 7-11, 2006

“InGaAlAs/InP electro absorption transceiver with modulation and photodetection bandwith exceeding 40GHz” F. Van Dijk*, A. Enard*, A. Marceaux*, D. Carpentier*, C. Kazmierski* (*Alcatel-Thales, 3-5lab, Marcoussis, France

Conference : International Conference on Indium Phosphide and Related Materials (IPRM) 2006, IPRMWA2.3, Princeton, NJ, USA, May, 7-11, 2006

«In-Situ epitaxial surface passivation of GaAIN/GaN HEMT heterostructures grown by LP-MOCVD», MA. Di Forte Poisson*, N. Sarazin*, M. Magis*, M.Tordjman*, E. Morvan*, R. Aubry*, J. Di Persio**, B. Grimbert*** (*Alcatel-Thales, 3-5lab, Marcoussis, France,**Université de Lille, LSPES, Villeneuve d’Ascq, France,***IEMN/Tiger-Villeneuve d’Ascq, France,)

Conference : IC-MOVPE, Miyazaki, Japan, May 22-26, 2006

«InP HBT XOR and phase-detector for 40 Gbit/s clock and data recovery (CDR)», V. Puyal*, A. Konczykowska**, M. Riet**, S. Bernard*, P. Nouet*, J. Godin** (* LIRMM, Montpellier, France, **Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : MIKON 2006, Cracow, Poland, May, 2006

 
"Ultra-compact X-band GaIn/GaAs HBT MMIC amplifiers : 11W, 42 % of PAE on 13 mm² and 8.7W, 38% of PAE on 9mm² ,S. Piotrowicz*, E. Chartier*, JC. Jacquet*, D. Floriot*, J. Obregon**, P. Dueme***, J. Delaire***, Y. Mancuso***, (*Alcatel-Thales, 3-5lab, Marcoussis, France, ** IRCOM, Faculté des sciences de Limoges, Limoges, France, ***Thales Airborne systems, Elancourt, France )

Conference : International Microwave Symposium Digest (IMS) 2006, ref: 1867-1870, San Francisco CA, USA, June, 11-16, 2006

"Large-Signal modeling of high-speed InP DHBTs using electromagnetic simulation based De-embedding", T.K. Johansen*,V. Kroser*, A. Konczykowska**, M. Riet**, J. Vidkjaer*, (*Technical University of Denmark, Oersted-DTU, Section electromagnetic systems, Lyngby, Denmark, *Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : International Microwave Symposium Digest (IMS) 2006, ref: 655-658, San Francisco CA, USA, June, 11-16, 2006

"Design of a X-band GaN oscillator : from the low frequency noise device characterization and large signal modeling to circuit design", G. Soubercaze-Pun*!, JG. Tartarin*!, L. Bary*, J. Rayssac*, E. Morvan**, B. Grimbert***, S. Delage**, JC. Jaeger***, J. Graffeuil*! (*LAAS-CNRS and !Paul sabatier University, Toulouse, France,**Tiger, **Alcatel-Thales, 3-5lab, Marcoussis, France, *** Tiger, IEMN, Villeneuve d'Ascq, France)

Conference : International Microwave Symposium Digest (IMS) 2006, ref: 747, 750, San Francisco CA, USA, June, 11-16, 2006

"Electronic equalization for multi-gigabit communications", A. Konczykowska*(*Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : International Microwave Symposium Digest (IMS) 2006, Workshop WMJ, San Francisco CA, USA, June, 11-16, 2006

"Ion implanted AlGaN/GaN power HEMT Technology", E. Morvan * (*Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : International Microwave Symposium Digest (IMS) 2006, Workshop WSM (Advances in GaN HEMt device technology, modeling and applications ), San Francisco CA, USA, June, 11-16, 2006

“10 Gbit/s colourless reflective amplified modulator for access networks” C. Kazmierski**, A. Garreau**, J. Decobert**, MC. Cuisin**, JG. Provost**, H. Sillard**, F. Blache**, D. Carpentier**, J. Landreau**, P. Chanclou* (*France Telecom, R&D, Lannion, France, **Alcatel-Thales, 3-5lab, Marcoussis, France)

Conference : Workshop photonic components for broadband communication, Stockholm, Sweden, June 28-29, 2006

“High-power, High-brightness, Al-free active region tapered lasers at 975 nm with planar fully Gain-guided geometry”, M. Krakowski*i, M. Calligaro*, M. Miche*l, M. Lecomte*, O. Parillaud* (*Alcatel-Thales 3-5lab, Marcoussis, France)

Conference : European Conference on Optical Communications 2006 (ECOC), Ref. : Mo3.4.7, Cannes, France, September, 24-28, 2006

“First demonstration of 10 Gb/s direct modulation with a buried ridge distributed feedback laser based on quantum dash InAs/InP material at 1.55 µm”, B. Dagens*, D. Make*, O. Le Gouezigou*, JG. Provost*, F. Lelarge*, A. Accard*, F. Poingt*, J. Landreau*, O. Drisse*, E. Derouin*, F. Pommereau*, GH. Duan* (*Alcatel-Thales 3-5lab, Marcoussis, France)

Conference : European Conference on Optical Communications 2006 (ECOC), Ref. : Mo3.4.2, Cannes, France, September, 24-28, 2006

“10 Gbit/s drop and continue colorless operation of a 1.5 µm AlGaInAs reflective amplified electroabsorption modulator”, A. Garreau*, C. Kazmierski*, D. Chiaroni**, M. Le Pallec**, J. Decobert*, J. Landreau*, D. Carpentier*, JG. Provost* (*Alcatel-Thales 3-5lab, Marcoussis, France, **AlcatelCIT, R&I, Marcoussis, France)

Conference : European Conference on Optical Communications 2006 (ECOC), Ref. We1.6.5, Cannes, France, September, 24-28, 2006

“Ultra-narrow mode-beating spectral line-width of passively mode-locked quantum dot Fabry-Perot laser diode”, A. Shen*, C. Gosset**; J. Renaudier***,GH. Duan*, JL. Oudar**, F. Lelarge*, F. Pommereau*, F. Poingt*, L. Le Gouezigou*, O. Le Gouezigou*, (*Alcatel-Thales 3-5lab, Marcoussis, France, **CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France, ** Alcatel-Thales III-V Lab, Marcoussis, France and ***ENST, Paris, France )

Conference : European Conference on Optical Communications 2006 (ECOC), Ref. : We4.6.6, Cannes, France, September, 24-28, 2006

“Microwave properties of high modal Gain quantum dot InAs/GaAs Fabry-Pérot lasers emitting at 1.3 µm”, DY. Cong*, A. Martinez*, K. Merghem*, A. Lemaître*, A. Ramdane*, JG. Provost**, O. Le Gouezigou**, M. Fischer***, I. Krestnikov****, A. Kovsh****, (*CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France, ** Alcatel-Thales III-V Lab, Marcoussis, France, ***Nanoplus nanosystems and Technologies GmbH, Germany, ****NL Nanosemiconductor)

Conference : European Conference on Optical Communications 2006 (ECOC), Ref. : We3.P.73, Cannes, France, September, 24-28, 2006

“Experimental investigation of a cascaded optical 2R regenerator in an optical fibre link”, M. Gay*, L. Bramerie*, D. Massoubre**, A. O’Hare***, A. Shen****, JL. Oudar**, JC. Simon* (*CNRS UMR Foton, ENSSAT, Université rennes1, Lannion, France,** CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France, *** School of physics, Dublin Institute of Technology, Dublin, Ireland, **** Alcatel-Thales III-V Lab, Marcoussis, France)

Conference : European Conference on Optical Communications 2006 (ECOC), Ref. : Tu1.3.3, Cannes, France, September, 24-28, 2006

« 10 Gbit/s coolerless operation of a new AlGaInAs single active layer electroabsorption modulated laser with self thermal compensation » MC. Cuisin*, A. Garreau*, C. Jany*, J. Decobert*, O. Drisse*, E. Derouin*, F. Blache*, J. Landreau*, N. Lagay*, D. Carpentier*, C. Kazmierski*
 (* Alcatel-Thales III-V Lab, Marcoussis, France)

Conference : European Conference on Optical Communications 2006 (ECOC), Ref. : We1.6.6, Cannes, France, September, 24-28, 2006

“Low noise AllnAs planar junction avalanche photodiode for 10 Gb/s applications”, A. Rouvié*, D. Carpentier*, N. Lagay*, J. Decobert*, F. Pommereau*, M. Achouche* ( * Alcatel-Thales III-V Lab, Marcoussis, France)

Conference : European Conference on Optical Communications 2006 (ECOC), Ref. : We3.P.51, Cannes, France, September, 24-28, 2006

« Enhancement of system performance in 80 Gb/s OTDM systems by using a vertical microcavity based saturable absorber” A.M. Clarke*, PM. Anandarajah*, L. Bramerie**, C. Guignard*, D. Massoubre***, A. Shen****, JL. Oudar***, LP. Barry*, JC. Simon** (* RINCE, School of Electronic Eng. Dublin, Ireland, ** ENSSAT, Persyst Platform, UMR Foton, Lannion, France, *** CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France, **** Alcatel-Thales III-V Lab, Marcoussis, France)

Conference : European Conference on Optical Communications 2006 (ECOC), Ref. : Th1.4.6., Cannes, France, September, 24-28, 2006

“Uncooled directly modulated quantum dot laser 10 Gb/s transmission at 1.3 µm with constant operation parameters “B. Dagens*, O. Bertran-Pardo*, M. Fischer**, F. Gerschütz**, J. Koeth**, I. Krestnikov***, A. Kovsh***, O. Le Gouezigou*, D. Make*, (*Alcatel-Thales 3-5lab, Marcoussis, France,** Nanoplus Nanosystems and Technologies GmbH, Gerbrunn, Germany,***NL Nanosemiconductor GmbH, Dortmund, Germany)

Conference : Post-dealine, VOL. 6, European Conference on Optical Communications 2006 (ECOC), Cannes, France, September, 24-28, 2006

“AlGaN/GaN HEMT reliability assessment by means of low frequency noise measurements”, A. Sozza*,**,***, A. Curutchet***,****, C. Dua*, N. Malbert***, N. Labat***, A. Touboul*** (*Alcatel-Thales 3-5lab, Marcoussis, France,** DEI, Università degli studi di Padova, Padova, Italy, ***IXL, Université Bordeaux 1, Talence, France, ****IEMN, Université de Lille, Villeneuve d’Ascq , France)

Conference : Electron Devices Failure Physics and analysis (ESREF) 2006, Pages 1725-1730, Wuppertal, Allemagne, October 3-6, 2006

“High power, very low noise, C. W. operation of 1.32 µm quantum-dot Fabry Perot laser diodes”, M. Krakowski*, P. Resneau*, M. Calligaro*, H. Liu**, M. Hopkinson** (*Alcatel-Thales 3-5lab, Marcoussis, France, **Electronic and electrical engineering, University of Sheffield, Sheffield, United Kingdom)

Conference : International Semiconductor Laser Conference 2006 (ISLC), Ref. : TUC4, Kohala Coast, Hawaï, USA , September 17-21, 2006

« Active mode-locking of quantum dot Fabry-Perot laser diode”, A. Shen*, F. Van Dijk*; J. Renaudier*,**, GH. Duan*, F. Lelarge*, F. Pommereau*, F. Poingt*, L. Le Gouezigou*, O. Le Gouezigou* (* Alcatel-Thales III-V Lab, Marcoussis, France ,** ENST, Paris, France)

Conference : International Semiconductor Laser Conference 2006 (ISLC), ref. : ThB6, Kohala Coast, Hawaï, USA , September 17-21, 2006

“Widely tunable photonic crystals lasers”, R. Brenot*, M Attali*, O. Le Gouezigou*, F. Poingt*, F. Pommereau*, L. Le Gouezigou*, O. Drisse*, F. Lelarge*, GH. Duan* (* Alcatel-Thales III-V Lab, Marcoussis, France )

Conference : International Semiconductor Laser Conference 2006 (ISLC), Ref. : ThA4, Kohala Coast, Hawaï, USA , September 17-21, 2006

“New double-Bragg DBR laser for C-band tuning with only one Bragg current control”, H. Debrégeas-Sillard*, C. Fortin*, A. Accard*, O. Drisse*, E. Derouin*, F. Pommereau*, C. Kazmierski* ( * Alcatel-Thales III-V Lab, Marcoussis, France )

Conference : International Semiconductor Laser Conference 2006 (ISLC), Ref. : TuB3, Kohala Coast, Hawaï, USA , September 17-21, 2006

« Recent advances in quantum dot material for microwave semiconductor lasers and amplifiers » B. Dagens*, F. Lelarge*, B. Rousseau*, A. Accard*, F. Poingt*, JG. Provost*, D. Make*, O. Le Gouezigou*, J. Landreau*, F. Pommereau*, R. Brenot*, J. Renaudier**, F. Van Dijk*, GH. Duan* (*Alcatel-Thales III-V Lab, Marcoussis, France,** Alcatel-Thales III-V Lab, Marcoussis, France and ENST, Paris, France, )

Conference : International Topical Meeting on Microwave photonics 2006 (MWP) Ref. : T1.1, Grenoble, France October, 3-6, 2006

“Optical summation of RF signals”, M. Chtioui*, A. Marceaux*, A. Enard*, F. Cariou*, C. Dernazaretian*, D. Carpentier*, M. Achouche* (*Alcatel-Thales III-V Lab, Marcoussis, France)

Conference : International Topical Meeting on Microwave photonics 2006 (MWP), REF. : F1.2, Grenoble, France October, 3-6, 2006

“Bulk active layer DBR laser for 34 GHz electrical and optical active mode-locking », F. Van Dijk*, J. Renaudier**, C. Gosset***, F. Lelarge*, R.Brenot*, B. Rousseau*, H. Sillard*, O. Le Gouezigou*, F. Poingt*, F. Pommereau*, JL. Oudar***, GH. Duan* (*Alcatel-Thales III-V Lab, Marcoussis, France, ** Alcatel-Thales III-V Lab, Marcoussis, France and ENST, Paris, France,*** CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Marcoussis, France)

Conference : International Topical Meeting on Microwave photonics 2006 (MWP), Grenoble, France, October, 2006 , P8

«Diode laser DFB à 852 nm sans aluminium dans la zone active pour horloges et interferometrie atomiques », V. Ligeret*, FJ. Vermersch*, S. Bansropun**, M. Lecomte*, M. Calligaro*, O. Parillaud*, M. Krakowski* (*Alcatel-Thales III-V Lab, Palaiseau, France,** Thales Research & Technology, Palaiseau, France)

Conference : Journées Nationales d’Optique Guidée (JNOG) 2006, Metz, France, November 7-11, 2006