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SCOPE OF
ACTIVITY
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GaN
power HEMTs
With
its record
breakdown field and electron saturation velocity characteristics, GaN
is expected to become the best material for a wide range of microwave
devices, from power amplifiers to low noise amplifier, oscillator,
switches or mixers
A common laboratory
entitled TIGER was created in 2002 to develop GaN HEMT technology for
applications up to 40GHz. TIGER gathers members from the III-V Lab and
from the Institute of Electronics, Microelectronics and Nanotechnology
(IEMN) located at Lille. This Laboratory, is covering research
activities from material growth to RF function demonstrations including
0.15µm process, thermal and physical simulations, thermal
management and circuit design.
All the
developments are carried out taking into account the reliability
challenge.
Photograph of a
power AlGaN/GaN HEMT for S-Band power application.
Gate dimensions: 24 fingers of
100 µm x 0.25 µm
Output
power (blue), power gain (red) and power added efficiency (green)
obtained at 18GHz in CW using TIGER AlGaN/GaN HEMT.
G lin =11dB
G SAT =7.5dB,
P SAT =32dBm(7,9W/mm)
PAE=36%
Noise figure of AlGaN/GaN HEMT from 5GHz to
18GHz
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