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Through numerous industrial transfers, III-V Lab has developed :

. versatile device design and characterization for sources, detectors, and micro-electronic circuits, mainly for telecom and mid-infra-red applications,

processing and epitaxy-related know-how based on well defined and controlled Building-Blocks so as to provide high yield and reproducible state-of-the-art opto- and micro-electronic devices.

III-V Lab offers all steps of services for devices fabrication, from device design to fully processed wafers (2” to 4”), based on GaAs and InP substrates and addressing small/medium volume.

Typically :

Electrical and optical modeling know-how of DFB, FP, DBR lasers, modulators and photodetectors

. MOVPE , MBE and GSMBE including regrowth (butt-joint, SAG, buried layers)
. ‘Industrial-type’ processing environment including E-beam lithography, ICP etching and dielectric deposition …
. advanced characterization set-ups

…developed and maintained by high level competence teams

 

For more details about our offer click here

 

Contact : jean-louis.gentner@3-5lab.fr

 

 

Optical lithography

 

 

 

 

 

 

 

Molecular Beam Epitaxy
multi-wafer reactor

 

 

 

 

 

Gas-Source MBE regrowth on an ICP-etched grating written by electron-beam lithography