Through numerous industrial transfers, III-V Lab has developed :
. versatile device design and characterization for sources, detectors, and micro-electronic circuits, mainly for telecom and mid-infra-red applications,
processing and epitaxy-related know-how based on well defined and controlled Building-Blocks so as to provide high yield and reproducible state-of-the-art opto- and micro-electronic devices.
III-V Lab offers all steps of services for devices fabrication, from device design to fully processed wafers (2” to 4”), based on GaAs and InP substrates and addressing small/medium volume.
Typically :
Electrical and optical modeling know-how of DFB, FP, DBR lasers, modulators and photodetectors
…developed and maintained by high level competence teams
Optical lithography
Molecular Beam Epitaxy
multi-wafer reactor
Gas-Source MBE regrowth on an ICP-etched grating written by electron-beam lithography