CORE COMPETENCIES

- Advanced III-V heterostructures   Epitaxy
- Device processing
- Characterization, modelling and   design
- Packaging and demonstrators

CORE COMPETENCIES

Characterization, modelling and design

 

Many test set-ups have been developed at the III-V Lab for the characterization of the different types of devices and circuits such as:

. near-field or far-field and chirp monitoring of optical laser sources and modulators,
. responsivity and noise of single or arrayed photodetectors,
. microwave S parameters and large signal non linear measurements of electronic devices.

While thermal and electronic modeling, device and circuit designs mostly rely on commercially available softwares, sometimes complemented by specific internal codes, a number of in-house softwares have been developed for guided-wave optoelectronic devices, anticipating the capabilities of commercial ones.

 

 

 

Amplitude and phase of optical pulses generated by a self-pulsating Distributed Bragg Reflector (DBR) 1.55 µm laser. Pulse duration is about 2.7 ps


 

 

 

 

 

 

 

Modeling of the evanescent coupling from a multimode diluted MQW waveguide to the absorption layer of a photodiode

 

 

 

 

 

 

 

 

High efficiency 2-stage GaAs HBT monolithic X-band amplifier based on UMS foundry process

 

 

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